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Dec 30.2025, 14:00:38
**Abstract:** Based on classic lifetime models, IVCT (Inventchip Technology) conducted Robustness-Validation testing on a large sample size of its second-generation (G2) 650V SiC MOSFETs. Strictly following AEC-Q101 and ZVEI standards, the testing covered key items including HTRB, HTGB+, HV-H3TRB, and IOL. Classic reliability physics models such as Arrhenius, Hallberg-Peck, Coffin-Manson, and Eyring were introduced for data analysis.A total of 2,156 SiC MOSFET samples were subjected to extreme stress testing for up to 3,500 hours. Data analysis indicates that under typical application conditions, the predicted device lifespan reaches hundreds of years. This far exceeds the stricter 18-year lifespan standard set by IVCT for automotive-grade products, highlighting the products excellent reliability.**1. Introduction and Verification Objectives**Silicon Carbide (SiC) power devices offer significant advantages in improving system energy conversion efficiency and power density, but their re...